BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 3

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF6G22L-40BN
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit
[1]
The BLF6G22L-40BN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
I
Symbol
G
η
ACPR
PAR
Dq
DSS
DSX
GSS
Dq
j
fs
D
(BR)DSS
GS(th)
DS(on)
p
= 25
= 345 mA; P
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; f = 2167.5 MHz.
O
°
C per section; unless otherwise specified
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
quiescent drain current
Characteristics
Application information
Parameter
power gain
drain efficiency
adjacent channel power ratio
output peak-to-average ratio
All information provided in this document is subject to legal disclaimers.
L
= 40 W (CW); f = 2140 MHz.
DS
= 28 V; I
Rev. 1 — 30 August 2010
1
= 2112.5 MHz; f
Dq
= 345 mA; T
Conditions
V
V
V
V
V
V
V
V
I
main transistor:
sense transistor:
D
2
GS
DS
GS
GS
DS
GS
DS
GS
V
I
V
= 2117.5 MHz; f
= 2.1 A
DS
DS
DS
case
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
P
P
P
Conditions
P
= 7.43mA;
= 28 V
= 26.7 V
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
D
= 2.5 W
= 2.5 W
= 2.5 W
= 20 W
DS
D
D
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
°
C; unless otherwise specified; in a
= 59 mA
= 2.9 A
= 28 V
BLF6G22L-40BN
= 0 V
3
= 2162.5 MHz; f
[1]
Power LDMOS transistor
Min
65
1.4
-
8.8
-
-
-
310
Min
17.8 19
13
−57
3.6
DS
Typ
-
1.9
-
10
-
4.3
0.25
345
= 28 V;
Typ
16
−50
4.0
© NXP B.V. 2010. All rights reserved.
4
= 2167.5 MHz;
21.0
-
Max
−45
4.8
Max
-
2.4
1.5
-
150
-
-
380
Unit
dB
%
dBc
dB
3 of 13
Unit
V
V
μA
A
nA
S
Ω
mA