SI4410DY NXP Semiconductors, SI4410DY Datasheet - Page 6

• Manufacturer Part Number: SI4410DY
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
10
I
10
10
10
10
10
I
D
D
50
40
30
20
10
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.5
1
10 V
min
5 V
typ
2
1
max
V
GS
V
V DS (V)
GS
03aa36
= 2.6 V
(V)
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
03ad50
3 V
Rev. 03 — 4 December 2009
3
1.5
Fig 6.
Fig 8.
(pF)
(A)
I
C
D
10
10
10
50
40
30
20
10
0
4
3
10
function of gate-source voltage; typical values
as a function of drain-source voltage; typical
values
Transfer characteristics: drain current as a
Input, output and reverse transfer capacitances
0
−1
V
DS
N-channel TrenchMOS logic level FET
> I
D
1
x R
T
j
1
DSon
= 150 °C
2
10
25 °C
SI4410DY
3
© NXP B.V. 2009. All rights reserved.
V
DS
V
C
C
C
GS
(V)
03ad54
iss
oss
rss
03ad52
(V)
10
4
2
6 of 12