SI4410DY NXP Semiconductors, SI4410DY Datasheet - Page 3

• Manufacturer Part Number: SI4410DY
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 1.
Fig 3.
(%)
(A)
I
I
10
10
der
D
120
10
80
40
10
−1
−2
0
1
2
10
function of ambient temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
P
R
DSon
t
p
= V
T
50
DS
/I
δ =
D
t
T
p
t
100
150
T
amb
1
03aa19
(°C)
Rev. 03 — 4 December 2009
200
D.C.
Fig 2.
P
(%)
120
der
80
40
0
function of ambient temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
100
V
DS
t
1 ms
10 ms
100 ms
10 s
(V)
p
= 10 µs
SI4410DY
150
© NXP B.V. 2009. All rights reserved.
T
amb
03aa11
03ae23
(°C)
200
10
2
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