PSMN7R0-30YL NXP Semiconductors, PSMN7R0-30YL Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
2500
2000
1500
1000
10
10
10
10
10
10
C
(A)
500
I
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
2
min
C
1
C
rss
iss
4
6
typ
2
V
8
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GS
003aab271
003aac724
V
max
GS
(V)
(V)
10
3
Rev. 04 — 9 March 2011
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS (th)
(V)
16
14
12
10
8
6
4
3
2
1
0
-60
of drain current; typical values
junction temperature
0
20
0
PSMN7R0-30YL
40
max
typ
min
3.2
60
60
V
120
GS
© NXP B.V. 2011. All rights reserved.
80
(V) = 4.5
003aac722
003a a c337
T
j
I
D
(°C)
(A)
10
180
100
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