PSMN6R5-80BS NXP Semiconductors, PSMN6R5-80BS Datasheet - Page 8

• Manufacturer Part Number: PSMN6R5-80BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN6R5-80BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
12
10
10
GS
8
6
4
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
20
20
40
40
16 V
V
GS
60
(V) = 5
10
V
60
DS
64 V
80
All information provided in this document is subject to legal disclaimers.
Q
= 40 V
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G
I
D
(nC)
(A)
5.5
20
6
8
100
80
Rev. 2 — 2 March 2012
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
PSMN6R5-80BS
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aaa508
003aad445
(V)
C
C
C
iss
oss
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10
2
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