PSMN5R0-80PS NXP Semiconductors, PSMN5R0-80PS Datasheet - Page 6

• Manufacturer Part Number: PSMN5R0-80PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
[2]
PSMN5R0-80PS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
100
(A)
250
200
150
100
I
(A)
D
80
60
40
20
50
I
0
D
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
1
10
6 5.5
2
T
…continued
j
= 175 °C
2
3
Conditions
I
see
I
V
V
S
S
DS
GS
= 25 A; V
= 50 A; dI
3
(V) = 4
Figure 17
= 40 V
4
V
003aad081
003aad083
V
DS
GS
25 °C
(V)
4.5
(V)
5
GS
S
4
5
Rev. 02 — 23 June 2009
/dt = 100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
10000
GS
9000
8000
7000
6000
5000
4000
3000
(pF)
N-channel 80 V 4.7 mΩ standard level MOSFET
R
(mΩ)
C
DSon
10
= 0 V;
8
6
4
2
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
2
0
50
4
V
GS
PSMN5R0-80PS
(V) = 5
100
Min
-
-
-
6
C
rss
150
C
iss
Typ
0.8
56
116
8
© NXP B.V. 2009. All rights reserved.
200
003aad082
003aad087
V
10
20
Max
1.2
-
-
I
GS
D
5.5
(A)
(V)
6
250
10
Unit
V
ns
nC
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