PSMN5R0-100ES NXP Semiconductors, PSMN5R0-100ES Datasheet - Page 3

• Manufacturer Part Number: PSMN5R0-100ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN5R0-100ES
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current limited by package
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf735
mb
(°C)
Conditions
T
T
V
V
T
pulsed; t
V
V
pulsed; t
T
Rev. 3 — 26 September 2011
j
j
mb
mb
GS
GS
GS
sup
200
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
j
j
≤ 175 °C
≤ 175 °C; R
j
mb
j(init)
= 100 °C; see
GS
Fig 2.
= 25 °C; see
Figure 2
= 25 °C; I
= 50 Ω; Unclamped
P
mb
mb
(%)
der
120
80
40
= 25 °C; see
= 25 °C
0
function of mounting base temperature
Normalized total power dissipation as a
0
GS
D
= 20 kΩ
Figure 1
= 120 A;
Figure 1
50
PSMN5R0-100ES
Figure 3
100
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
Max
100
100
20
110
120
622
338
175
260
120
622
537
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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