PSMN038-100K NXP Semiconductors, PSMN038-100K Datasheet - Page 7

• Manufacturer Part Number: PSMN038-100K
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN038-100K_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
DSon
0.09
0.08
0.07
0.06
0.05
0.04
0.03
V
(V)
0.1
GS
10
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
D
j
4.5 V
= 6.3 A
= 25 °C
10
5 V
15
20
V
DD
= 20 V 50 V 80 V
30
30
T
Q
j
40
G
V
= 25 °C
GS
(nC)
I
D
03ae04
= 6 V
03ad99
10 V
(A)
7 V
Rev. 02 — 25 November 2009
45
50
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
C
C
(pF)
C
oss
iss
rss
10
10
10
a
,
,
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN038-100K
60
10
120
V
© NXP B.V. 2009. All rights reserved.
DS
03aa29
T
C
C
C
(V)
j
03ae03
( ° C)
iss
oss
rss
10
180
2
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