PSMN038-100K NXP Semiconductors, PSMN038-100K Datasheet - Page 6

• Manufacturer Part Number: PSMN038-100K
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN038-100K_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
10
10
10
10
10
10
I
D
D
50
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
1
V
GS
2
= 10 V
2
min
7 V
typ
3
4
max
V
4
GS
V
(V)
DS
4.5 V
03ad98
03aa35
6 V
5 V
(V)
Rev. 02 — 25 November 2009
5
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
50
40
30
20
10
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
DS
> I
D
X R
0
2
DSon
T
j
= 150 °C
PSMN038-100K
60
4
max
min
typ
25 °C
120
6
© NXP B.V. 2009. All rights reserved.
V
T
GS
j
(°C)
03aa32
03ae00
(V)
180
8
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