PSMN038-100K NXP Semiconductors, PSMN038-100K Datasheet - Page 2

• Manufacturer Part Number: PSMN038-100K
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN038-100K_2
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PSMN038-100K
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
GS
tot
Symbol
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Package
Name
SO8
Description
source
source
source
gate
drain
drain
drain
drain
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
T
T
T
T
T
T
j
sp
sp
sp
sp
sp
≥ 25 °C; T
= 80 °C; see
= 25 °C; t
= 80 °C; see
= 80 °C
= 25 °C; t
Rev. 02 — 25 November 2009
j
p
p
≤ 150 °C
≤ 10 µs; pulsed; see
≤ 10 µs; pulsed
Figure 1
Figure 2
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
and
3
SOT96-1 (SO8)
8
1
Figure 3
5
4
PSMN038-100K
Graphic symbol
Min
-
-20
-
-
-
-55
-55
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
100
20
6.3
50
3.5
150
150
3.1
50
D
Version
SOT96-1
S
Unit
V
V
A
A
W
°C
°C
A
A
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