PSMN035-150B NXP Semiconductors, PSMN035-150B Datasheet - Page 7

• Manufacturer Part Number: PSMN035-150B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
0.8
0.6
4.5
3.5
2.5
1.5
0.5
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
1.0
3.0
2.0
4
3
2
1
0
−60
junction temperature
factor as a function of junction temperature
−40
−20
0
20
40
60
80
max
typ
min
100
T
120
j
(°C)
T
j
140
003aaa023
003aaa022
(°C)
160
Rev. 04 — 17 November 2009
180
N-channel TrenchMOS SiliconMAX standard level FET
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of gate
V
R
(V)
GS
DSon
(Ω)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
0
0
4.4 V
I
T
D
j
= 25 °C
= 50 A
4.6 V
5
4.8 V
20
10
5.0 V
PSMN035-150B
V
DD
15
40
= 30 V
5.2 V
20
5.4 V
V
60
DD
© NXP B.V. 2009. All rights reserved.
V
GS
Q
25
003aaa021
003aaa028
G
= 120 V
6.0 V
= 8 V
I
(nC)
D
(A)
30
80
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