PSMN035-150B NXP Semiconductors, PSMN035-150B Datasheet - Page 3

• Manufacturer Part Number: PSMN035-150B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 1.
Fig 3.
P
(%)
(%)
I
der
der
120
120
80
40
80
40
0
0
function of mounting base temperature
function of mounting base temperature
Normalized continuous drain current as a
Normalized total power dissipation as a
0
0
50
50
100
100
150
150
T
T
mb
mb
03aa24
03aa16
(°C)
(°C)
Rev. 04 — 17 November 2009
200
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
(A)
I
(A)
I
AS
D
10
10
10
10
10
1
1
3
2
2
10
currents as a function of drain-source volt
as a function of pulse duration
Safe operating area; continuous and peak drain
Non-repetitive avalanche ruggedness current
1
−3
P
R
DSon
T
j
t
p
prior to avalanche = 150 °C
= V
T
10
DS
−2
d =
/ I
10
D
T
t
t
p
PSMN035-150B
10
D.C.
−1
10
2
25 °C
100 ms
V
1
t
© NXP B.V. 2009. All rights reserved.
100 μs
10 ms
p
1 ms
DS
= 10 μs
003aaa016
003aaa017
t
p
(V)
(ms)
10
10
3
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