PSMN030-150P NXP Semiconductors, PSMN030-150P Datasheet - Page 7

• Manufacturer Part Number: PSMN030-150P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN030-150P
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
(A)
(A)
I
I
a
D
D
2.9
2.1
1.3
0.5
70
60
50
40
30
20
10
50
40
30
20
10
0
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
2
x R
T
j
DSon
= 175 °C
20
0.8
4
V
T
GS
j
1.2
= 25 °C
6
= 10 V
100
8 V
1.6
T
All information provided in this document is subject to legal disclaimers.
8
j
(°C)
003aaf054
V
003aaf056
V
003aaf058
DS
GS
5.4 V
5.2 V
4.8 V
4.6 V
4.4 V
6 V
5 V
(V)
(V)
Rev. 02 — 16 December 2010
180
2.0
10
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
DS(on)
GS(th)
(Ω)
(S)
(V)
g
0.08
0.06
0.04
0.02
fs
4.5
3.5
2.5
1.5
0.5
50
40
30
20
10
0
0
−60
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
0
D
j
DS
4.4 V 4.6 V
= 25 °C
= 1 mA; V
> I
D
10
10
x R
DSon
DS
4.8 V
20
= V
PSMN030-150P
20
20
T
maximum
GS
T
minimum
j
5 V
j
typical
= 175 °C
= 25 °C
8 V
30
30
100
5.2 V
V
GS
© NXP B.V. 2010. All rights reserved.
T
40
40
j
= 10 V
(°C)
003aaf055
003aaf057
003aaf059
I
I
D
D
5.4 V
(A)
(A)
6 V
180
50
50
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