PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet - Page 7

• Manufacturer Part Number: PSMN025-100D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN025-100D
Product data sheet
Fig 6.
Fig 8.
50
45
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
Drain current, ID (A)
VDS > ID X RDS(ON)
Drain Current, ID (A)
function of drain-source voltage; typical
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0.2
VGS = 10V
1
0.4
8 V
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
0.6
2
0.8
6 V
1
3
1.2
175 C
4
1.4
All information provided in this document is subject to legal disclaimers.
4 V
1.6
4.4 V
Tj = 25 C
5
Tj = 25 C
Rev. 4 — 12 January 2012
1.8
4.6 V
4.8 V
lma019
5 V
4.2 V
lma021
2
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
50
45
40
35
30
25
20
15
10
4.5
3.5
2.5
1.5
0.5
5
0
4
3
2
1
0
-60 -40 -20
0
Transconductance, gfs (S)
Threshold Voltage, VGS(TO) (V)
VDS > ID X RDS(ON)
drain current; typical values
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
5
10
0
Junction Temperature, Tj (C)
15
20
Drain current, ID (A)
Tj = 25 C
PSMN025-100D
20
40
25
60
minimum
typical
80
maximum
30
100 120 140 160 180
35
© NXP B.V. 2012. All rights reserved.
40
175 C
45
lma024
lma022
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50