PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet - Page 4

• Manufacturer Part Number: PSMN025-100D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN025-100D
Product data sheet
Fig 3.
Fig 4.
(A)
I
10
10
D
10
10
-1
3
2
1
Maximum permissible non-repetitive avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
100
10
/ I
1
0.001
D
Maximum Avalanche Current, I
All information provided in this document is subject to legal disclaimers.
Tj prior to avalanche = 150 C
10
Rev. 4 — 12 January 2012
0.01
DC
Avalanche time, t
N-channel TrenchMOS SiliconMAX standard level FET
0.1
AS
(A)
AV
(ms)
25 C
1
10
2
lma029
10
PSMN025-100D
10 ms
100 ms
t
100 μ s
p
=10 μ s
V
DS
(V)
© NXP B.V. 2012. All rights reserved.
003aah007
10
3
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