PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet
PSMN025-100D,118
Specifications of PSMN025-100D,118
PSMN025-100D /T3
PSMN025-100D /T3
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PSMN025-100D,118 Summary of contents
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... PSMN025-100D N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 — 20 November 2008 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... kΩ 100 °C; see Figure °C; see Figure GS mb pulsed °C; see Figure °C; see Figure °C mb pulsed °C mb Rev. 03 — 20 November 2008 PSMN025-100D Graphic symbol mbb076 2 3 Version SOT428 Min Max - 100 - 100 - see Figure 188 - 150 -55 175 -55 175 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage Maximum Avalanche Current, I 100 lma015 10 1 0.001 125 150 175 Fig 4. Maximum permissible non-repetitive avalanche current as a function of avalanche time Rev. 03 — 20 November 2008 PSMN025-100D Min Max ≤ 260 sup = 50 Ω 100 D.C. ...
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... Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0.1 0.05 0. single pulse 1E-06 1E-05 1E-04 1E-03 1E-02 Pulse width, tp (s) Rev. 03 — 20 November 2008 PSMN025-100D Min Typ Max - lma018 1E-01 1E+00 © NXP B.V. 2008. All rights reserved. Unit K/W ...
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... 5.6 Ω °C G(ext) j measured from tab to centre of die °C j measured from source lead to source bond pad ° °C; see Figure /dt = -100 A/µ ° Rev. 03 — 20 November 2008 PSMN025-100D Min Typ Max Unit 100 - - 0.05 10 µ 500 µA - 0.02 100 nA - 0.02 ...
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... V 0.12 0.1 0.08 0.06 0.04 0. 100 120 140 160 180 Fig 11. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 20 November 2008 PSMN025-100D Drain current, ID (A) Forward transconductance as a function of Drain current, ID (A) minimum typical maximum 0 0 ...
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... 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig 15. Source current as a function of source-drain voltage; typical values Rev. 03 — 20 November 2008 PSMN025-100D lma026 Ciss Coss Crss 1 10 Drain-Source Voltage, VDS (V) lma028 175 1.1 1.2 1.3 1.4 1.5 Source-Drain Voltage, VSDS (V) © ...
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... min min 0.56 6.22 6.73 4.0 4.45 2.285 0.20 5.98 6.47 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 03 — 20 November 2008 PSMN025-100D min 10.4 2.95 0.9 0.5 4.57 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 06-02-14 06-03-16 © NXP B.V. 2008. All rights reserved. ...
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... PSMN025-100D_1 19990201 PSMN025-100D_3 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Objective data sheet - Rev. 03 — 20 November 2008 PSMN025-100D Supersedes PSMN025-100D_2 PSMN025-100D_1 - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 20 November 2008 PSMN025-100D © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 03 — 20 November 2008 All rights reserved. Document identifier: PSMN025-100D_3 ...