PSMN012-100YS NXP Semiconductors, PSMN012-100YS Datasheet - Page 9

• Manufacturer Part Number: PSMN012-100YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN012-100YS_4
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
(V)
DSon
GS
45
30
15
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
20
20
(V) =
20V
4.5
40
40
V
DS
60
60
4.8
= 50V
80V
All information provided in this document is subject to legal disclaimers.
Q
003aad853
003aad854
I
D
G
(A)
(nC)
5.0
5.5
10.0
Rev. 04 — 23 February 2010
80
80
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN012-100YS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad851
(V)
C
C
C
oss
iss
rss
10
2
9 of 15