PSMN012-100YS NXP Semiconductors, PSMN012-100YS Datasheet - Page 7

• Manufacturer Part Number: PSMN012-100YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN012-100YS_4
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(S)
g
DSon
120
fs
90
60
30
40
31
22
13
0
4
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
2
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
25
8
…continued
50
14
Conditions
I
I
V
S
S
DS
75
= 15 A; V
= 15 A; dI
All information provided in this document is subject to legal disclaimers.
= 50 V
V
003aad849
003aad852
GS
I
D
(A)
(V)
Rev. 04 — 23 February 2010
100
GS
20
S
/dt = 100 A/µs; V
= 0 V; T
N-channel 100V 12mΩ standard level MOSFET in LFPAK
j
= 25 °C; see
Fig 6.
Fig 8.
(pF)
GS
(A)
C
I
6000
4000
2000
D
120
90
60
30
= 0 V;
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
Figure 17
3
PSMN012-100YS
Min
-
-
-
6
1
10.0
Typ
0.8
56
129
9
© NXP B.V. 2010. All rights reserved.
V
GS
V
V
003aad850
003aad847
GS
DS
Max
1.2
-
-
(V) = 4
(V)
(V)
5.5
C
C
5.0
4.8
4.5
iss
rss
12
2
nC
Unit
V
ns
7 of 15