PMT21EN NXP Semiconductors, PMT21EN Datasheet - Page 8

• Manufacturer Part Number: PMT21EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMT21EN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
10.0
GS
7.5
5.0
2.5
0.0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 6 A; V
= 0 V
j
j
= 150 °C
= 25 °C
DS
= 15 V; T
5
amb
10
= 25 °C
(A)
I
S
8
6
4
2
0
0.0
Q
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G
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(nC)
0.2
15
Rev. 1 — 30 August 2011
0.4
(1)
Fig 15. Gate charge waveform definitions
0.6
0.8
V
V
V
V
GS(pl)
017aaa338
(2)
DS
GS(th)
GS
V
SD
(V)
30 V, 7.4 A N-channel Trench MOSFET
1.0
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMT21EN
© NXP B.V. 2011. All rights reserved.
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