PMT21EN NXP Semiconductors, PMT21EN Datasheet

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMT21EN

Manufacturer Part Number
PMT21EN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
[1]
2. Pinning information
Table 2.
Symbol
V
V
I
Static characteristics
R
Pin
1
2
3
4
D
DS
GS
DSon
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Symbol Description
G
D
S
D
Quick reference data
Pinning information
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
gate
drain
source
drain
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMT21EN
30 V, 7.4 A N-channel Trench MOSFET
Rev. 1 — 30 August 2011
Logic-level compatible
Very fast switching
Relay driver
High-speed line driver
Conditions
T
V
V
j
GS
GS
= 25 °C
= 10 V; T
= 10 V; I
Simplified outline
D
amb
= 7.4 A; T
SOT223 (SC-73)
= 25 °C
1
j
= 25 °C
2
4
3
Trench MOSFET technology
Low-side loadswitch
Switching circuits
[1]
Graphic symbol
Min
-
-20
-
-
G
Product data sheet
Typ
-
-
-
18
017aaa253
D
S
2
Max
30
20
7.4
21
.
Unit
V
V
A
mΩ

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PMT21EN Summary of contents

Page 1

... PMT21EN 30 V, 7.4 A N-channel Trench MOSFET Rev. 1 — 30 August 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching 1.3 Applications  ...

Page 2

... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET Version SOT223 Min Max - 30 -20 20 [1] - 7.4 [1] - 4.7 ≤ 10 µs ...

Page 3

... Rev. 1 — 30 August 2011 30 V, 7.4 A N-channel Trench MOSFET 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature (1) (2) (3) (4) (5) ( (V) DS PMT21EN 017aaa124 125 175 T (°C) j 017aaa329 2 10 © NXP B.V. 2011. All rights reserved ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMT21EN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET Min Typ Max [1] - 132 152 [ ...

Page 5

... G(ext ° 1. ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET Min Typ Max 1.5 2 100 - - 100 ...

Page 6

... V (V) DS Fig 7. 017aaa333 R DSon (3) (4) (mΩ) (5) ( (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET – –4 10 (1) (2) –5 10 – ° (1) minimum values ...

Page 7

... GS Fig 11. Normalized drain-source on-state resistance as 017aaa249 (pF) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET 1.6 a 1.4 1.2 1.0 0.8 0.6 – function of junction temperature; typical values ...

Page 8

... Q (nC °C Fig 15. Gate charge waveform definitions ( ( 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 ...

Page 9

... Test information Fig 17. Duty cycle definition PMT21EN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 10

... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET solder lands solder resist 7.65 solder paste occupied area Dimensions in mm solder lands solder resist 8.7 occupied area Dimensions in mm preferred transport direction during soldering 1.9 (3× ...

Page 12

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMT21EN v.1 20110830 PMT21EN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2011 PMT21EN 30 V, 7.4 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMT21EN All rights reserved. Date of release: 30 August 2011 Document identifier: PMT21EN ...

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