PMT21EN NXP Semiconductors, PMT21EN Datasheet - Page 6

• Manufacturer Part Number: PMT21EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMT21EN
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
100
30
20
10
80
60
40
20
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
2
j
j
= 25 °C
= 25 °C
(1)
GS
GS
GS
GS
GS
GS
= 2.4 V
= 2.6 V
= 3.0 V
= 3.2 V
= 4.5 V
= 10.0 V
10 V
4.5 V
10
1
(2)
18
2
(3)
V
GS
2.6 V
2.4 V
2.3 V
3.0 V
26
3
= 3.2 V
(4)
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V
017aaa332
017aaa333
I
DS
D
(A)
(V)
(5)
(6)
34
Rev. 1 — 30 August 2011
4
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
10
10
10
10
D
100
75
50
25
–3
–4
–5
–6
0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
0
D
j
= 25 °C; V
= 8 A
j
j
= 150 °C
= 25 °C
30 V, 7.4 A N-channel Trench MOSFET
2
(1)
DS
1
= 5 V
4
(2)
6
2
PMT21EN
(3)
(1)
(2)
V
© NXP B.V. 2011. All rights reserved.
GS
8
017aaa244
017aaa334
V
(V)
GS
(V)
10
3
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