PMR400UN NXP Semiconductors, PMR400UN Datasheet - Page 3

• Manufacturer Part Number: PMR400UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMR400UN
Product data sheet
Fig 1.
Fig 3.
(A)
I D
10 -1
10 -2
I
(%)
der
10
120
1
80
40
10 -1
0
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
Limit R DSon = V DS / I D
100
150
All information provided in this document is subject to legal disclaimers.
T
sp
1
03aa25
(°C)
200
Rev. 2 — 2 February 2012
DC
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS ultra low level FET
10
50
100
V DS (V)
t p = 10 μ s
100 μ s
1 ms
10 ms
100 ms
PMR400UN
150
© NXP B.V. 2012. All rights reserved.
T
sp
03aa17
(°C)
03ao06
200
10 2
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