PMR400UN NXP Semiconductors, PMR400UN Datasheet - Page 2

• Manufacturer Part Number: PMR400UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMR400UN
Product data sheet
Type number
PMR400UN
Type number
PMR400UN
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Package
Name
SC-75
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2012
Conditions
T
T
T
T
T
T
T
T
j
j
sp
sp
sp
sp
sp
sp
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C
= 25 °C
= 25 °C; pulsed; t
Marking code
R7
j
j
≤ 150 °C
≤ 150 °C; R
GS
GS
= 4.5 V
= 4.5 V
p
p
≤ 10 µs
≤ 10 µs
N-channel TrenchMOS ultra low level FET
GS
= 20 kΩ
PMR400UN
Min
-
-
-8
-
-
-
-
-55
-55
-
-
© NXP B.V. 2012. All rights reserved.
SOT416
150
150
Version
Max
30
30
8
0.8
0.51
1.61
0.53
0.44
0.88
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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