PMR400UN NXP Semiconductors, PMR400UN Datasheet
PMR400UN
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PMR400UN Summary of contents
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... PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Low threshold voltage Surface mounted package 1.3 Applications ...
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... ≤ 10 µ °C; pulsed ° °C sp ≤ 10 µ °C; pulsed All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN Version SOT416 Min Max - kΩ 0.8 - 0.51 - 1.61 - 0.53 -55 ...
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... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature DC 1 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET 50 100 150 μ s 100 μ ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PMR400UN Product data sheet N-channel TrenchMOS ultra low level FET Conditions All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN Min Typ Max Unit - - 235 K/W ...
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... ° Ω 4 Ω °C G(ext 0 ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN Min Typ Max Unit 0. ...
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... V (V) DS Fig 6. 03an95 2 2.5 3 4.5 1.5 2 2.5 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET 2 ( ° 1 Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... Fig 10. Sub-threshold drain current as a function of 03an98 C iss C oss C rss (V) DS Fig 12. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET − (A) −4 10 min typ −5 10 − 0.4 ...
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... Product data sheet ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET 03an99 0 (nC) G © NXP B.V. 2012. All rights reserved ...
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... Dimensions in mm 2.2 1.7 1 0.5 (3×) 0.6 (3×) 1.3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET 0.95 0.60 0.45 0.15 0.30 0.25 0.15 0.10 04-11-04 solder lands solder resist 2 solder paste occupied area Dimensions in mm sot416_fr © NXP B.V. 2012. All rights reserved. ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date PMR400UN v.2 20120202 • Modifications: The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET © NXP B.V. 2012. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2012 PMR400UN N-channel TrenchMOS ultra low level FET © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMR400UN All rights reserved. Date of release: 2 February 2012 Document identifier: PMR400UN ...