PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 3

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
PMDT290UCE
Product data sheet
Symbol
TR2 (P-channel)
V
V
I
I
P
TR2 (P-channel), Source-drain diode
I
TR2 (P-channel), ESD maximum rating
V
Per device
P
T
T
T
D
DM
S
Fig 1.
j
amb
stg
DS
GS
tot
ESD
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
source current
electrostatic discharge voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
−25
25
…continued
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
j
(°C)
175
Conditions
T
V
V
T
T
T
T
HBM
T
Rev. 1 — 6 October 2011
j
amb
amb
sp
amb
amb
GS
GS
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
= 25 °C
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Fig 2.
amb
amb
(%)
I
der
120
= 25 °C
= 100 °C
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
p
≤ 10 µs
−25
25
2
PMDT290UCE
[1]
[1]
[2]
[1]
[1]
[3]
[2]
.
75
Min
-
-8
-
-
-
-
-
-
-
-
-
-55
-55
-65
125
© NXP B.V. 2011. All rights reserved.
017aaa124
T
j
150
150
150
Max
-20
8
-550
-350
-2.2
330
390
1090
-370
2000
500
(°C)
175
Unit
V
V
mA
mA
A
mW
mW
mW
mA
V
mW
°C
°C
°C
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