PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 11

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UCE
Product data sheet
Fig 17. TR1; Gate-source voltage as a function of gate
Fig 19. TR1; Source current as a function of
V
(V)
(A)
I
GS
S
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
0.0
0.0
charge; typical values
source-drain voltage; typical values
I
V
(1) T
(2) T
D
GS
= 0.5 A; V
= 0 V
j
j
= 150 °C
= 25 °C
0.1
0.2
DS
= 10 V; T
0.2
0.4
(1)
0.3
0.6
amb
= 25 °C
0.4
0.8
All information provided in this document is subject to legal disclaimers.
(2)
017aaa359
017aaa360
Q
V
G
SD
(nC)
(V)
0.5
1.0
Rev. 1 — 6 October 2011
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Fig 18. Gate charge waveform definitions
Fig 20. TR2; Output characteristics: drain current as a
(A)
I
D
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
function of drain-source voltage; typical values
T
0
V
j
V
V
V
-4.5 V
GS(pl)
= 25 °C
DS
GS(th)
GS
-2.5 V
Q
-1
GS1
I
Q
D
GS
Q
-2.0 V
GS2
PMDT290UCE
-2
Q
G(tot)
V
GS
Q
-1.6 V
-1.4 V
GD
= -1.8 V
-3
© NXP B.V. 2011. All rights reserved.
V
017aaa137
017aaa363
DS
(V)
-4
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