PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 13

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UCE
Product data sheet
Fig 25. TR2; Normalized drain-source on-state
Fig 27. TR2; Input, output and reverse transfer
(pF)
C
a
10
2.0
1.5
1.0
0.5
0.0
10
1
-10
2
-60
resistance as a function of ambient
temperature; typical values
capacitances as a function of drain-source
voltage; typical values
f = 1 MHz; V
(1) C
(2) C
(3) C
-1
iss
oss
rss
0
GS
-1
= 0 V
60
(1)
(2)
(3)
-10
120
V
All information provided in this document is subject to legal disclaimers.
DS
017aaa368
T
017aaa370
j
(V)
(°C)
-10
180
Rev. 1 — 6 October 2011
2
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Fig 26. TR2; Gate-source threshold voltage as a
Fig 28. TR2; Gate-source voltage as a function of gate
V
GS(th)
V
(V)
(V)
GS
-1.5
-1.0
-0.5
0.0
-5
-4
-3
-2
-1
0
-60
0.0
function of junction temperature
charge; typical values
I
(1) maximum values
(2) typical values
(3) minimum values
I
D
D
= -0.25 mA; V
= -0.4 A; V
0.2
0
DD
DS
= -10 V; T
(1)
(2)
(3)
PMDT290UCE
= V
0.4
60
GS
amb
120
0.6
= 25 °C
© NXP B.V. 2011. All rights reserved.
Q
017aaa369
T
017aaa371
G
j
(°C)
(nC)
180
0.8
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