PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 9
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415035/sot223_3d_sml.gif)
PHT4NQ10T
Manufacturer Part Number
PHT4NQ10T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHT4NQ10T.pdf
(12 pages)
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Philips Semiconductors
9. Package outline
Fig 16. SOT223.
9397 750 09581
Product data
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
Rev. 02 — 2 May 2002
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
2
c
H
7.3
6.7
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
TrenchMOS™ standard level FET
detail X
0.1
w
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
EUROPEAN
0.1
y
PHT4NQ10T
A
L
p
Q
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223
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