PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 8

• Manufacturer Part Number: PHT4NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09581
Product data
Fig 14. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
10
8
2
6
4
source-drain (diode forward) voltage; typical
values.
0
0
0.2
0.4
T j = 150 C
GS
0.6
= 0 V
0.8
25 C
1
V SD (V)
03aa94
1.2
Rev. 02 — 2 May 2002
Fig 15. Gate-source voltage as a function of gate
V GS
I
(V)
D
= 3.5 A; V
15
10
charge; typical values.
5
0
0
T j = 25 C
I D = 3.5 A
DS
= 80 V
TrenchMOS™ standard level FET
4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V DS = 20 V
PHT4NQ10T
8
V DS = 80 V
Q G (nC)
03aa96
12
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