PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 4

• Manufacturer Part Number: PHT4NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09581
Product data
Symbol
R
R
Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
th(j-a)
Mounted on a metal clad substrate.
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient mounted on a printed circuit board;
Z th(j-sp)
(K/W)
7.1 Transient thermal impedance
10 -2
10 -1
10 2
10
1
10 -5
= 0.5
0.05
0.02
0.2
0.1
single pulse
10 -4
10 -3
Rev. 02 — 2 May 2002
Conditions
mounted on a metal clad substrate;
Figure 5
minimum footprint
10 -2
10 -1
TrenchMOS™ standard level FET
P
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
1
t p
Min
-
-
T
PHT4NQ10T
t p (s)
03aa87
=
Typ
-
150
t p
T
t
10
Max
18
-
Unit
K/W
K/W
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