PHKD3NQ10T NXP Semiconductors, PHKD3NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHKD3NQ10T
• Description: Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHKD3NQ10T
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
minimum
1
8
V
D
DD
DS
= 3 A
= 20 V
= V
2
GS
16
typical
3
V
DD
24
= 80 V
maximum
All information provided in this document is subject to legal disclaimers.
4
Q
003aaf134
V
003aaf136
G
GS
(nC)
(V)
Rev. 02 — 16 December 2010
32
5
Fig 12. Input, output and reverse transfer capacitances
Fig 14. Source (diode forward) current as a function of
(pF)
(A)
I
Dual N-channel TrenchMOS standard level FET
C
F
10
10
10
10
6
4
2
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
= 0 V; f = 1 MHz
= 0 V
T
j
= 150 °C
0.4
1
PHKD3NQ10T
0.8
10
T
j
= 25 °C
V
V
© NXP B.V. 2010. All rights reserved.
SDS
DS
C
003aaf135
C
C
003aaf137
oss
(V)
iss
rss
(V)
10
1.2
2
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