PHKD3NQ10T NXP Semiconductors, PHKD3NQ10T Datasheet
PHKD3NQ10T
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PHKD3NQ10T Summary of contents
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... PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... One MOSFET sp conducting ° ° °C sp ≤ °C; pulsed All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Graphic symbol Version SOT96-1 Min Max - 100 = 20 kΩ - 100 GS ...
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... I DS(on D.C. −1 10 −2 10 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T 100 Normalized continuous drain current as a function of mounting base temperature 003aaf126 μs 100 μ 100 ms ...
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... Z = 0.5 th(j-a) (K/W) 0.2 10 0.1 0.05 0. single pulse −1 10 −2 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Min Typ - - - 150 003aaf127 t p δ − (s) p Max Unit 62.5 K/W - K/W © ...
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... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Min Typ Max 100 - - - - ...
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... (V) GS Fig 8. 003aaf132 V 100 180 T (°C) j Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Dual N-channel TrenchMOS standard level FET 0.20 4.6 4.8 5 DS(on) (Ω) 0.16 0.12 0.08 0. °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 12. Input, output and reverse transfer capacitances 003aaf136 (nC) G Fig 14. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Dual N-channel TrenchMOS standard level FET (pF −1 10 ...
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... REFERENCES JEDEC JEITA MS-012 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Dual N-channel TrenchMOS standard level FET θ detail ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHKD3NQ10T v.2 20101216 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHKD3NQ10T Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PHKD3NQ10T ...