PHK04P02T NXP Semiconductors, PHK04P02T Datasheet - Page 3

• Manufacturer Part Number: PHK04P02T
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHK04P02T
Product data sheet
Fig 1.
Fig 3.
P
(%)
tot
100
80
60
40
20
0
ambient temperature
Normalised power dissipation as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
sp
= 25 °C; I
40
DM
is single pulse
80
I
(A)
DM
10
10
10
10
−1
−2
120
1
2
10
−1
All information provided in this document is subject to legal disclaimers.
001aam073
T
a
R
(°C)
DS(on)
Rev. 02 — 14 December 2010
160
= V
DS
1
/ I
D
D.C.
Fig 2.
(%)
10
I
D
120
80
40
0
function of ambient temperature
100 ms
V
Normalized continuous drain current as a
10 ms
t
V
0
p
DS
GS
001aam075
= 1 ms
P-channel vertical D-MOS logic level FET
(V)
≤ -10 V
10
40
2
80
PHK04P02T
120
© NXP B.V. 2010. All rights reserved.
001aam074
T
a
(°C)
160
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