PHK04P02T NXP Semiconductors, PHK04P02T Datasheet - Page 2

• Manufacturer Part Number: PHK04P02T
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHK04P02T
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHK04P02T
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol Description
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
source
source
source
gate
drain
drain
drain
drain
Package
Name
SO8
Description
plastic small outline package; 8 leads; body width 3.9 mm
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 December 2010
Simplified outline
SOT96-1 (SO8)
Conditions
T
R
T
T
T
T
T
T
T
8
1
j
sp
sp
sp
sp
sp
sp
sp
GS
≥ 25 °C; T
= 100 °C
= 25 °C
= 25 °C; pulsed
= 25 °C
= 100 °C
= 25 °C
= 25 °C; pulsed; t
= 20 kΩ
j
5
4
≤ 150 °C
P-channel vertical D-MOS logic level FET
p
≤ 5 s
Graphic symbol
PHK04P02T
G
Min
-
-
-8
-
-
-
-
-
-55
-55
-
-
001aaa025
© NXP B.V. 2010. All rights reserved.
D
S
150
150
Version
SOT96-1
Max
-16
-16
8
-1.87
-4.66
-26.4
5
2
-4.66
-26
Unit
V
V
V
A
A
A
W
W
°C
°C
A
A
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