PHB32N06LT NXP Semiconductors, PHB32N06LT Datasheet - Page 6

• Manufacturer Part Number: PHB32N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB32N06LT_2
Product data sheet
Fig 8.
Fig 10. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
a
1.5
0.5
2
1
0
2
1
0
-60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
60
60
max
typ
min
120
120
T
03aa33
T
j
j
( ° C)
03af18
(°C)
Rev. 02 — 30 November 2009
180
180
Fig 9.
Fig 11. Gate-source voltage as a function of turn-on
R
V
(Ω)
DSon
(V)
0.05
0.04
0.03
0.02
GS
10
8
6
4
2
0
of drain current; typical values
gate charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
T
D
j
j
= 25 °C
= 20 A
= 25 °C
N-channel TrenchMOS logic level FET
V
DD
10
10
= 14 V
20
20
PHB32N06LT
V
DD
= 44 V
V
30
30
GS
© NXP B.V. 2009. All rights reserved.
Q
= 3.5 V
I
G
D
10 V
(A)
(nC)
03ah50
03ah54
4 V
5 V
40
40
6 of 11