PHB32N06LT NXP Semiconductors, PHB32N06LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHB32N06LT

Manufacturer Part Number
PHB32N06LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHB32N06LT
Manufacturer:
NXP
Quantity:
81 000
Part Number:
PHB32N06LT
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Suitable for logic level gate drive
sources
General purpose switching
PHB32N06LT
N-channel TrenchMOS logic level FET
Rev. 02 — 30 November 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
see
V
V
see
V
T
V
T
see
j
mb
mb
j
j
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C;
Figure 1
Figure 2
Figure 11
Figure 9
= 25 °C; V
= 25 °C;
= 44 V; T
= 5 V; I
= 4.5 V; I
= 5 V; I
D
D
j
and
and
≤ 175 °C
= 20 A;
j
D
= 20 A;
= 25 °C;
GS
= 20 A;
3
10
= 5 V;
Switched-mode power supplies
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
8.5
31.5
30
Max
60
34
97
-
43
40
Unit
V
A
W
nC
mΩ
mΩ

Related parts for PHB32N06LT

PHB32N06LT Summary of contents

Page 1

... PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 — 30 November 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... ° ° j(init Ω unclamped 0.11 ms Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT404 Min Max - -15 15 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DSon Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET 03aa16 50 100 150 200 T (°C) mb 03ah48 = 10 μ 100 μ ...

Page 4

... °C G(ext ° see Figure /dt = -100 A/µ - ° Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET Min Typ Max 2.3 1 1 500 - ...

Page 5

... I S (A) 30 max (V) GS Fig 7. Source current as a function of source-drain voltage; typical values Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET 03ah51 × > DSon 175 ° ° (V) GS 03ah52 ...

Page 6

... ( 120 180 0 T (°C) j Fig 11. Gate-source voltage as a function of turn-on gate charge; typical values Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET 03ah50 = 25 ° 3 (A) D 03ah54 = °C ...

Page 7

... C (pF − Conditions see Figure 13 mounted on printed-circuit board; minimum footprint −4 −3 − Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET 03ah53 C iss C oss C rss 2 10 (V) DS Min Typ Max - - 1. 03ah47 δ = ...

Page 8

... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...

Page 9

... Legal texts have been adapted to the new company name where appropriate. PHP_PHB_32N06LT-01 20011106 (9397 750 09024) PHB32N06LT_2 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data - Rev. 02 — 30 November 2009 PHB32N06LT Supersedes PHP_PHB_32N06LT-01 - © NXP B.V. 2009. All rights reserved ...

Page 10

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 30 November 2009 PHB32N06LT N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 November 2009 Document identifier: PHB32N06LT_2 All rights reserved. ...

Related keywords