PHB32N06LT NXP Semiconductors, PHB32N06LT Datasheet - Page 3

• Manufacturer Part Number: PHB32N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB32N06LT_2
Product data sheet
Fig 1.
Fig 3.
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
100
150
R
T
DSon
mb
03aa24
(°C)
= V
Rev. 02 — 30 November 2009
200
DS
/I
D
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
V
DS
N-channel TrenchMOS logic level FET
(V)
50
t
p
= 10 μs
100 μs
1 ms
10 ms
100
PHB32N06LT
03ah48
10
2
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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