BSS138PS NXP Semiconductors, BSS138PS Datasheet - Page 7

• Manufacturer Part Number: BSS138PS
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS138PS
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
(1) V
(2) V
(3) V
(4) V
(5) V
D
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0
0.0
T
current as a function of drain-source voltage;
typical values
T
Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
Per transistor: Output characteristics: drain
amb
amb
GS
GS
GS
GS
GS
V
= 2 V
= 2.5 V
= 3 V
= 3.5 V
= 10 V
GS
= 25 °C
= 25 °C
= 3.5 V
0.2
1.0
(1)
0.4
3.0 V
2.0
0.6
(2)
3.0
2.25 V
2.75 V
2.5 V
2.0 V
0.8
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V
017aaa112
017aaa114
(3)
(4)
(5)
DS
I
D
(V)
(A)
Rev. 1 — 2 November 2010
4.0
1.0
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
(1) minimum values
(2) typical values
(3) maximum values
(1) T
(2) T
D
6.0
4.0
2.0
0.0
60 V, 320 mA dual N-channel Trench MOSFET
−3
−4
−5
−6
0.0
0.0
T
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
I
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
D
amb
amb
amb
= 300 mA
= 25 °C; V
= 150 °C
= 25 °C
2.0
0.5
DS
4.0
= 5 V
(1)
1.0
(2)
6.0
BSS138PS
(3)
1.5
(1)
(2)
© NXP B.V. 2010. All rights reserved.
8.0
V
017aaa113
017aaa115
V
GS
GS
(V)
(V)
10.0
2.0
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