BSS138PS NXP Semiconductors, BSS138PS Datasheet - Page 4

• Manufacturer Part Number: BSS138PS
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
BSS138PS
Product data sheet
Fig 3.
(A)
I
10
10
10
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
D
10
−1
−2
−3
1
10
I
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
−1
DM
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
= single pulse
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
Table 6.
[1]
[2]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Limit R
All information provided in this document is subject to legal disclaimers.
1
DSon
2
Rev. 1 — 2 November 2010
= V
DS
/I
D
Conditions
in free air
in free air
60 V, 320 mA dual N-channel Trench MOSFET
10
[1]
[2]
[1]
V
DS
Min
-
-
-
-
(V)
BSS138PS
Typ
390
340
-
-
© NXP B.V. 2010. All rights reserved.
017aaa122
(1)
(2)
(3)
(4)
(5)
(6)
Max
445
390
130
300
10
2
.
2
Unit
K/W
K/W
K/W
K/W
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