BSS138PS NXP Semiconductors, BSS138PS Datasheet - Page 2

• Manufacturer Part Number: BSS138PS
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BSS138PS
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number Package
BSS138PS
Type number
BSS138PS
Symbol
Per transistor
V
V
I
I
D
DM
DS
GS
* = placeholder for manufacturing site code
Symbol
S1
G1
D2
S2
G2
D1
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
SC-88
All information provided in this document is subject to legal disclaimers.
Description
source1
gate1
drain2
source2
gate2
drain1
Rev. 1 — 2 November 2010
Description
plastic surface-mounted package; 6 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
60 V, 320 mA dual N-channel Trench MOSFET
= 25 °C
= 100 °C
Marking code
NZ*
Simplified outline
p
≤ 10 μs
1
6
5
2
[1]
[1]
4
3
Min
-
-
-
-
-
Graphic symbol
BSS138PS
© NXP B.V. 2010. All rights reserved.
Max
60
±20
320
200
1.2
D
S
1
1
G
1
Version
SOT363
D
S
Unit
V
V
mA
mA
A
2
2
msd901
G
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2