BSN20 NXP Semiconductors, BSN20 Datasheet - Page 8
![Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415233/sot023_3d_sml.gif)
BSN20
Manufacturer Part Number
BSN20
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSN20.pdf
(13 pages)
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BSN20
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa55
I S
(A)
T
= 25 C and 150 C; V
= 0 V
j
GS
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
9397 750 07213
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 26 June 2000
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