BSN20 NXP Semiconductors, BSN20 Datasheet - Page 2
![Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415233/sot023_3d_sml.gif)
BSN20
Manufacturer Part Number
BSN20
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSN20.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSN20
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSN20,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSN20-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
BSN20215
Manufacturer:
NXP Semiconductors
Quantity:
172 878
Company:
Part Number:
BSN204
Manufacturer:
PHILIPS
Quantity:
6 203
Company:
Part Number:
BSN204A
Manufacturer:
PHILIPS
Quantity:
6 203
Company:
Part Number:
BSN205A
Manufacturer:
PHILIPS
Quantity:
1 770
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07213
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 03 — 26 June 2000
j
sp
sp
j
j
sp
sp
sp
sp
sp
sp
GS
GS
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 5 V; I
and
D
N-channel enhancement mode field-effect transistor
Figure 1
D
3
= 100 mA
GS
GS
= 100 mA
GS
= 10 V
= 10 V;
= 10 V;
GS
p
p
= 20 k
10 s;
10 s
Figure 2
Typ
2.8
3.8
Min
65
65
© Philips Electronics N.V. 2000. All rights reserved.
Max
50
173
0.83
150
15
20
Max
50
50
173
110
0.7
0.83
+150
+150
173
0.7
20
BSN20
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
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