BSN20 NXP Semiconductors, BSN20 Datasheet - Page 10
![Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415233/sot023_3d_sml.gif)
BSN20
Manufacturer Part Number
BSN20
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSN20.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSN20
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSN20,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSN20-7
Manufacturer:
DIODES/美台
Quantity:
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Company:
Part Number:
BSN20215
Manufacturer:
NXP Semiconductors
Quantity:
172 878
Company:
Part Number:
BSN204
Manufacturer:
PHILIPS
Quantity:
6 203
Company:
Part Number:
BSN204A
Manufacturer:
PHILIPS
Quantity:
6 203
Company:
Part Number:
BSN205A
Manufacturer:
PHILIPS
Quantity:
1 770
10. Revision history
Table 6:
Philips Semiconductors
9397 750 07213
Product specification
Rev Date
03
02
01
20000626
19970618
19901031
Revision history
CPCN
HZG303
-
-
Description
Product specification; third version; supersedes BSN20_2 of 970618.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
Product specification; initial version.
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
BSN20
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