NX2301P NXP Semiconductors, NX2301P Datasheet - Page 3

• Manufacturer Part Number: NX2301P
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX2301P
Product data sheet
Fig 1.
P
(%)
der
120
80
40
0
−75
Normalized total power dissipation as a
function of ambient temperature
P
der
=
−25
----------------------- -
P
tot 25°C
P
(
tot
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
P
T
T
T
Source-drain diode
I
25
S
)
j
amb
stg
tot
×
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
100 %
75
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Limiting values
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
(°C)
175
Rev. 1 — 26 October 2010
…continued
T
T
Conditions
T
Fig 2.
amb
sp
amb
= 25 °C
(%)
I
der
= 25 °C
= 25 °C
120
80
40
0
−75
Normalized continuous drain current as a
function of ambient temperature
I
der
=
−25
------------------- -
I
D 25°C
20 V, 2 A P-channel Trench MOSFET
(
I
D
)
25
×
100 %
[2]
[1]
[1]
Min
-
-
-
−55
−65
-
75
NX2301P
© NXP B.V. 2010. All rights reserved.
125
Max
400
710
2.8
150
+150
+150
−0.7
T
017aaa002
amb
(°C)
175
2
, t ≤ 5 s.
Unit
mW
mW
W
°C
°C
°C
A
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