NX2301P NXP Semiconductors, NX2301P Datasheet - Page 15

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

NX2301P

Manufacturer Part Number
NX2301P
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
NX2301P
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 October 2010
salesaddresses@nxp.com
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20 V, 2 A P-channel Trench MOSFET
NX2301P
© NXP B.V. 2010. All rights reserved.
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