BUK98150-55A NXP Semiconductors, BUK98150-55A Datasheet - Page 7

• Manufacturer Part Number: BUK98150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK98150-55A_4
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
2.5
1.5
0.5
(S)
g
fs
2
1
0
6
4
2
0
I
junction temperature
T
drain current; typical values
-60
D
0
j
= 1 mA; V
= 25 C; V
2
0
DS
DS
= V
= 25 V
GS
4
60
max
typ
min
6
120
8
T
03aa33
003aab634
j
I
( C)
D
(A)
180
10
Rev. 04 — 11 June 2007
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
10
I
10
10
10
10
10
(pF)
D
600
400
200
C
-1
-2
-3
-4
-5
-6
0
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
-2
= 25 C; V
= 0 V; f = 1 MHz
C
C
C
oss
N-channel TrenchMOS logic level FET
iss
rss
10
DS
-1
= V
1
min
BUK98150-55A
GS
1
typ
2
max
10
© NXP B.V. 2007. All rights reserved.
V
GS
V
03aa36
003aab635
DS
(V)
(V)
10
3
2
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