BUK98150-55A NXP Semiconductors, BUK98150-55A Datasheet - Page 2

• Manufacturer Part Number: BUK98150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK98150-55A_4
Product data sheet
Type number
BUK98150-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
DR
DRM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Conditions:
a) Value not quoted. Repetitive rating defined in
b) Single-pulse avalanche rating limited by T
c) Repetitive avalanche rating limited by an average junction temperature of 145 C.
d) Refer to application note AN10273 for further information.
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
Ordering information
Limiting values
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
j(max)
Figure
of 150 C.
Rev. 04 — 11 June 2007
Conditions
R
T
T
T
T
T
T
unclamped inductive load; I
V
T
sp
sp
sp
sp
sp
sp
j
DS
GS
= 25 C
16.
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; R
GS
GS
GS
= 50 ; V
Figure 1
= 5 V; see
= 5 V; see
p
p
10 s; see
10 s
GS
D
N-channel TrenchMOS logic level FET
Figure 2
Figure 2
= 5.5 A;
= 5 V; starting at
Figure 3
and
BUK98150-55A
3
[1]
© NXP B.V. 2007. All rights reserved.
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +150
55 +150
55
55
5.5
3
22
8
5.5
22
22
-
15
Version
SOT223
2 of 13
Unit
V
V
V
A
A
A
W
A
A
mJ
J
C
C