BUK98150-55A NXP Semiconductors, BUK98150-55A Datasheet - Page 3

• Manufacturer Part Number: BUK98150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK98150-55A_4
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
10
(%)
(A)
120
10
I
der
D
10
80
40
-1
0
2
1
function of solder point temperature
T
P
0
1
sp
der
= 25 C; I
=
Limit R
----------------------- -
P
tot 25 C
50
P
DM
tot
DSon
is single pulse.
= V
DS
100 %
100
/ I
D
150
T
03aa17
sp
( C)
200
Rev. 04 — 11 June 2007
10
Fig 2. Continuous drain current as a function of
(A)
I
DC
D
6
4
2
0
V
solder point temperature
25
GS
5 V
N-channel TrenchMOS logic level FET
50
V
DS
(V)
75
BUK98150-55A
100
t
100 s
1 ms
10 ms
100 ms
p
125
© NXP B.V. 2007. All rights reserved.
= 10 s
003aab629
003aab630
T
sp
( C)
10
150
2
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