BUK9675-55A NXP Semiconductors, BUK9675-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9675-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9675-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
2.5
1.5
0.5
25
20
15
10
5
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
T
1
j
= 175 °C
0
2
60
T
max
typ
min
j
= 25 °C
3
120
All information provided in this document is subject to legal disclaimers.
4
03aa33
T
V
j
GS
( ° C)
03nd41
(V)
180
Rev. 2 — 8 February 2011
5
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
180
160
140
120
100
80
60
40
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
0
0
V
DD
N-channel TrenchMOS logic level FET
= 14(V)
3 3.2
10
3.4
5
20
3.6
3.8 4
BUK9675-55A
V
30
DD
V
10
GS
= 44(V)
(V) = 5
Q
© NXP B.V. 2011. All rights reserved.
40
G
(nC)
I
D
03nd39
03nd44
(A)
15
50
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