BUK9675-55A NXP Semiconductors, BUK9675-55A Datasheet - Page 6

• Manufacturer Part Number: BUK9675-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9675-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
1
min
4
V
GS
typ
(V) = 8
6
2
max
V
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8
GS
03aa36
V
DS
(V)
03nd43
(V)
10
10
Rev. 2 — 8 February 2011
3
7
6
5
4
3
2.2
Fig 6.
Fig 8.
R
(mΩ)
g
(S)
DSon
fs
120
100
80
60
40
15
10
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
5
4
10
BUK9675-55A
6
15
8
© NXP B.V. 2011. All rights reserved.
20
V
GS
I
D
03nd42
03nd40
(V)
(A)
10
25
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